In-situ scanning transmission electron microscopy study of Al-amorphous SiO2 layer-SiC interface
نویسندگان
چکیده
Abstract Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO 2 –SiC interface. The investigation includes electrical, chemical, and structural analysis the interface at different temperatures (25–600 °C). results show that ~ 500 °C electrical (three-orders magnitude resistivity drop), chemical (dissolution amorphous layer), microstructural features ( e.g. formation Al O 3 , Si 4 C ) start to change. According results, dissolves in Al, leading α-Al within Al. In contrast, elemental interdiffusion (Al 3+ ⇄ 4+ between SiC occurs resulting . From can infer reaction mechanism crystalline is with phase. It believed similarities play an important role paving way for interdiffusion.
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ژورنال
عنوان ژورنال: Journal of Materials Science
سال: 2023
ISSN: ['1573-4803', '0022-2461']
DOI: https://doi.org/10.1007/s10853-023-08186-z